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Volumn 97, Issue 5, 1996, Pages 345-348
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Light hole - Heavy hole exciton crossover in strained ZnS
a a a a a a a |
Author keywords
A. semiconductors; A. thin films; D. electronic states (localized); D. optical properties; E. luminescence
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Indexed keywords
BAND STRUCTURE;
BINDING ENERGY;
ELECTRON ENERGY LEVELS;
ELECTRON TRANSITIONS;
ENERGY GAP;
EXCITONS;
LATTICE CONSTANTS;
MATHEMATICAL MODELS;
MOLECULAR BEAM EPITAXY;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM COMPOUNDS;
THIN FILMS;
BANDGAPS;
ELECTRONIC STATES;
ENERGY SHIFT;
HYDROGENIC MODEL;
IONIZATION ENERGY;
LIGHT HOLE HEAVY HOLE EXCITON CROSSOVER;
STRAIN SHIFT;
SEMICONDUCTING ZINC COMPOUNDS;
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EID: 0030083144
PISSN: 00381098
EISSN: None
Source Type: Journal
DOI: 10.1016/0038-1098(95)00688-5 Document Type: Article |
Times cited : (6)
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References (13)
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