Performance characteristics of vertical-cavity semiconductor laser amplifiers

Electronics Letters

Volumn 32, Issue 4, 1996, Pages 342-343

  Wiedenmann, D ^a   Moeller, B ^a   Michalzik, R ^a   Ebeling, K J ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

Semiconductor optical amplifiers; Vertical cavity surface emitting lasers

Indexed keywords

AMPLIFICATION; GAIN MEASUREMENT; LASER PULSES; LIGHT AMPLIFIERS; LIGHT REFLECTION; LIGHT TRANSMISSION; MOLECULAR BEAM EPITAXY; PERFORMANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

ALL OPTICAL SIGNAL REGENERATION; AMPLIFICATION BANDWIDTH; BRAGG REFLECTORS; LIGHTWAVE COMMUNICATIONS; LOW OPERATING POWER; OPTICAL PREAMPLIFICATION; POLARIZATION INSENSITIVITY; STEADY STATE AMPLIFICATION; TRANSMISSION MODES; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0030082904     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960236     Document Type: Article

References (5)

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5. WIPIEJEWSKI, T., PANZLAFF, K., ZEEB, E., and EBELING, K.J.: 'Tunable extremely low threshold vertical cavity laser diodes', IEEE Photonics Technol Lett., 1993, 5, (8), pp. 889-892