The influence of fabrication inhomogeneities on the characteristics of InGaAsP/InP directional coupler filters

Journal of Optical Communications

Volumn 17, Issue 1, 1996, Pages 2-5

  Zengerle, R ^a   Kuphal, E ^a   Leminger, O ^a  

^a DEUTSCHE TELEKOM LABORATORIES   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FABRICATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL COMMUNICATION; PHOTOLUMINESCENCE; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; X RAY DIFFRACTION;

DIRECTIONAL COUPLER FILTERS; GROWTH TEMPERATURE; LOW PRESSURE METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE PEAK WAVELENGTH;

OPTICAL FILTERS;

EID: 0030082831     PISSN: 01734911     EISSN: None     Source Type: Journal    
DOI: 10.1515/JOC.1996.17.1.2     Document Type: Article

References (5)

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4. C. H. Henry et al.; IEEE J. Quant. Electron. QE-21 (1985) 12, 1887-1892
5. P. Wolfram et al.: Europ. Workshop on MOVPE, Malmoe (1993), paper E3