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Volumn 31, Issue 3, 1996, Pages 581-587
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Change in the type of majority carriers in disordered InxSe100-x thin-film alloys
a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
AMORPHOUS MATERIALS;
CHEMICAL BONDS;
COMPOSITION;
ELECTRIC CONDUCTIVITY;
INDIUM ALLOYS;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTING SELENIUM;
SUBSTRATES;
SURFACE ROUGHNESS;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY PHOTOELECTRON SPECTROSCOPY;
MECHANICAL STYLUS PROFILEMETER;
MICROCRYSTALLINE STRUCTURE;
PERCOLATION THEORY;
SELENIUM ATOMIC CONCENTRATION;
TRANSMISSION ELECTRON DIFFRACTION;
TRANSMISSION ELECTRON MICROSCOPY MEASUREMENT;
X RAY GONIOMETER;
THIN FILMS;
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EID: 0030082823
PISSN: 00222461
EISSN: None
Source Type: Journal
DOI: 10.1007/BF00367872 Document Type: Article |
Times cited : (51)
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References (40)
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