-
1
-
-
33748863927
-
High efficiency GaAs thin film solar cells by peeled film technology
-
Washington, DC
-
M. Konagai and K. Takahashi, "High efficiency GaAs thin film solar cells by peeled film technology," in Proc. Int. Symp. Solar Energy, Washington, DC, 1976, pp. 154-157.
-
(1976)
Proc. Int. Symp. Solar Energy
, pp. 154-157
-
-
Konagai, M.1
Takahashi, K.2
-
2
-
-
0010033768
-
High efficiency GaAs thin film solar cells by peeled film technology
-
Dec.
-
M. Konagai, M. Sugimoto, and K. Takahashi, "High efficiency GaAs thin film solar cells by peeled film technology," J. Cryst. Growth, vol. 45, pp. 277-280, Dec. 1978.
-
(1978)
J. Cryst. Growth
, vol.45
, pp. 277-280
-
-
Konagai, M.1
Sugimoto, M.2
Takahashi, K.3
-
3
-
-
0026909159
-
Time-domain characterization of interconnect discontinuities in high-speed circuits
-
Aug.
-
J.-M. Jong and V. K. Tripathi, "Time-domain characterization of interconnect discontinuities in high-speed circuits," IEEE Trans. Comp., Hybrids, Manufact. Technol., vol. 15, pp. 497-504, Aug. 1992.
-
(1992)
IEEE Trans. Comp., Hybrids, Manufact. Technol.
, vol.15
, pp. 497-504
-
-
Jong, J.-M.1
Tripathi, V.K.2
-
4
-
-
0023997964
-
Uniform polymer coating technique for an etch-back planarization process using low molecular weight polymers
-
Apr.
-
H. Gokan, M. Mukainaru, and N. Endo, "Uniform polymer coating technique for an etch-back planarization process using low molecular weight polymers," J. Electrochem. Soc., vol. 135, pp. 1019-1021, Apr. 1988.
-
(1988)
J. Electrochem. Soc.
, vol.135
, pp. 1019-1021
-
-
Gokan, H.1
Mukainaru, M.2
Endo, N.3
-
5
-
-
0027617736
-
Epitaxial lift-off and its applications
-
June
-
P. Demeester, I. Pollentier, P. De Dobbelaere, and C. Brys, "Epitaxial lift-off and its applications," Semicond. Sci. Technol., vol. 8, pp. 1124-1135, June 1993.
-
(1993)
Semicond. Sci. Technol.
, vol.8
, pp. 1124-1135
-
-
Demeester, P.1
Pollentier, I.2
De Dobbelaere, P.3
Brys, C.4
-
6
-
-
36549092991
-
Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates
-
June 11
-
E. Yablonovitch, D. M. Hwang, T. J. Gmitter, L. T. Florez, and J. P. Harbison, "Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates," Appl. Phys. Lett., vol. 56, pp. 2419-2421, June 11, 1990.
-
(1990)
Appl. Phys. Lett.
, vol.56
, pp. 2419-2421
-
-
Yablonovitch, E.1
Hwang, D.M.2
Gmitter, T.J.3
Florez, L.T.4
Harbison, J.P.5
-
7
-
-
0026170160
-
A new bonding technology using gold and tin multilayer composite structures
-
June
-
C. C. Lee, C. J. Wang, and G. S. Matijasevic, "A new bonding technology using gold and tin multilayer composite structures," IEEE Trans. Comp., Hybrids, Manufact. Technol., vol. 14, pp. 407-412, June 1991.
-
(1991)
IEEE Trans. Comp., Hybrids, Manufact. Technol.
, vol.14
, pp. 407-412
-
-
Lee, C.C.1
Wang, C.J.2
Matijasevic, G.S.3
-
8
-
-
0026399120
-
A bonding technique for thin GaAs dice with via holes using gold-tin composites
-
Dec.
-
C. J. Wang and C. C. Lee, "A bonding technique for thin GaAs dice with via holes using gold-tin composites," IEEE Trans. Comp., Hybrids, Manufact. Technol., vol. 14, pp. 874-878, Dec. 1991.
-
(1991)
IEEE Trans. Comp., Hybrids, Manufact. Technol.
, vol.14
, pp. 874-878
-
-
Wang, C.J.1
Lee, C.C.2
-
9
-
-
4243263425
-
-
Ph.D. dissertation, University of California, Irvine, CA, UMI
-
G. S. Matijasevic, "Bonding technology of semiconductor devices and its characterization using scanning acoustic microscopy," Ph.D. dissertation, University of California, Irvine, CA, UMI, 1991.
-
(1991)
Bonding Technology of Semiconductor Devices and Its Characterization Using Scanning Acoustic Microscopy
-
-
Matijasevic, G.S.1
-
10
-
-
0026821838
-
A low temperature bonding process using deposited gold-tin composites
-
Feb.
-
C. C. Lee and C. J. Wang, "A low temperature bonding process using deposited gold-tin composites," Thin Solid Films, vol. 208, pp. 202-209, Feb. 1992.
-
(1992)
Thin Solid Films
, vol.208
, pp. 202-209
-
-
Lee, C.C.1
Wang, C.J.2
-
11
-
-
0027543054
-
Au-Sn alloy phase diagram and properties relating to its use as a bonding medium
-
Feb.
-
G. S. Matijasevic, C. C. Lee, and C. Y. Wang, "Au-Sn alloy phase diagram and properties relating to its use as a bonding medium," Thin Solid Films, vol. 223, pp. 276-287, Feb. 1993.
-
(1993)
Thin Solid Films
, vol.223
, pp. 276-287
-
-
Matijasevic, G.S.1
Lee, C.C.2
Wang, C.Y.3
-
12
-
-
0027589243
-
Alignable lift-off transfer of device arrays via a single polymeric carrier membrane
-
May 27
-
J. J. Callahan, K. P. Martin, T. J. Drabik, B. B. Quimby, and C. Fan, "Alignable lift-off transfer of device arrays via a single polymeric carrier membrane," Electron. Lett., vol. 29, pp. 951-953, May 27, 1993.
-
(1993)
Electron. Lett.
, vol.29
, pp. 951-953
-
-
Callahan, J.J.1
Martin, K.P.2
Drabik, T.J.3
Quimby, B.B.4
Fan, C.5
-
13
-
-
0019876355
-
Roomtemperature interdiffusion studies of Au/Sn thin film couples
-
Apr.
-
S. Nakahara, R. J. McCoy, L. Buene, and J. M. Vandenberg, "Roomtemperature interdiffusion studies of Au/Sn thin film couples," Thin Solid Films, vol. 84, pp. 185-196, Apr. 1981.
-
(1981)
Thin Solid Films
, vol.84
, pp. 185-196
-
-
Nakahara, S.1
McCoy, R.J.2
Buene, L.3
Vandenberg, J.M.4
-
14
-
-
0003585164
-
-
MIL-STD 883, United States Department of Defense, Washington, DC
-
"Test methods and procedures for microelectronics," MIL-STD 883, United States Department of Defense, Washington, DC, 1977.
-
(1977)
Test Methods and Procedures for Microelectronics
-
-
-
18
-
-
0025564277
-
Highly reliable Au-Sn eutectic bonding with back-ground GaAs LSI chips
-
Washington, DC
-
M. Nishiguchi, N. Goto, and H. Nishizawa, "Highly reliable Au-Sn eutectic bonding with back-ground GaAs LSI chips" in Proc. IEEE Int. Electron. Manufact. Technol. Symp., Washington, DC, 1990, pp. 216-222.
-
(1990)
Proc. IEEE Int. Electron. Manufact. Technol. Symp.
, pp. 216-222
-
-
Nishiguchi, M.1
Goto, N.2
Nishizawa, H.3
-
19
-
-
0027663911
-
Resonant cavity light emitting diode and detector using epitaxial liftoff
-
Sept.
-
B. Corbett, L. Considine, S. Walsh, and W. M. Kelly, "Resonant cavity light emitting diode and detector using epitaxial liftoff," IEEE Phot. Technol. Lett., vol. 5, pp. 1041-1043, Sept. 1993.
-
(1993)
IEEE Phot. Technol. Lett.
, vol.5
, pp. 1041-1043
-
-
Corbett, B.1
Considine, L.2
Walsh, S.3
Kelly, W.M.4
-
20
-
-
0001066332
-
2/Si and glass substrates
-
July 1
-
2/Si and glass substrates," J. Appl. Phys., vol. 66, pp. 459-462, July 1, 1989.
-
(1989)
J. Appl. Phys.
, vol.66
, pp. 459-462
-
-
Klem, J.F.1
Jones, E.D.2
Myers, D.R.3
Lott, J.A.4
-
21
-
-
0041812950
-
GaAs/AlGaAs multiple-quantum-well vertical optical modulators on glass using the epitaxial lift-off technique
-
June
-
L. Buydens, P. De Dobbelaere, P. Demeester, I. Pollentier, and P. van Daele, "GaAs/AlGaAs multiple-quantum-well vertical optical modulators on glass using the epitaxial lift-off technique," Opt. Lett., vol. 16, pp. 916-918, June 1991.
-
(1991)
Opt. Lett.
, vol.16
, pp. 916-918
-
-
Buydens, L.1
De Dobbelaere, P.2
Demeester, P.3
Pollentier, I.4
Van Daele, P.5
-
22
-
-
0026120907
-
Epitaxial liftoff of AlAs/GaAs double barrier resonant tunneling diodes
-
Mar.
-
A. J. Tsav, V. K. Reddy, and D. P. Nedirtz, "Epitaxial liftoff of AlAs/GaAs double barrier resonant tunneling diodes," Electron. Lett., vol. 27, pp. 484-486, Mar. 1991.
-
(1991)
Electron. Lett.
, vol.27
, pp. 484-486
-
-
Tsav, A.J.1
Reddy, V.K.2
Nedirtz, D.P.3
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