Process optimization and related material properties of silicon films produced by laser-induced chemical vapour deposition from silane

Journal of Materials Science

Volumn 31, Issue 4, 1996, Pages 1013-1019

  Tamir, S ^a   Zahavi, J ^a   Komem, Y ^b   Eizenberg, M ^b  

^a Technion Research and Development Foundation   (Israel)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHEMICAL VAPOR DEPOSITION; EXCIMER LASERS; IRRADIATION; LASER APPLICATIONS; MIXTURES; MORPHOLOGY; OPTIMIZATION; SEMICONDUCTING SILICON; SILANES; SILICA; SUBSTRATES;

LASER ENERGY; LASER IRRADIATION; LASER REPETITION RATE; SILANE ARGON GAS MIXTURE; SILICON FILMS;

SEMICONDUCTING FILMS;

EID: 0030082282     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF00352902     Document Type: Article

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