Elevated temperature stability of GaAs digital integrated circuits

IEEE Electron Device Letters

Volumn 17, Issue 2, 1996, Pages 37-39

  Braun, Eric K ^b,c   Shenoy, Krisha V ^b,d   Fonstad Jr , Clifton G ^a,b   Mikkelson, James M ^a,e  

^a IEEE

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c Maxim Corporation   (United States)

^d CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^e Vitesse Semiconductor Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; INTEGRATED OPTOELECTRONICS; MESFET DEVICES; OHMIC CONTACTS; SEMICONDUCTING GALLIUM ARSENIDE; THERMODYNAMIC STABILITY;

INTERCONNECT METAL SHEET RESISTANCE; OHMIC CONTACT EDGE; OHMIC CONTACT RESISTANCE;

DIGITAL INTEGRATED CIRCUITS;

EID: 0030082265     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.484116     Document Type: Article

References (4)

1. K. V. Shenoy, C. G. Fonstad, Jr., A. C. Grot, and D. Psaltis, "Monolithic optoelectronic circuit design and fabrication by epitaxial growth on commercial VLSI GaAs MESFET's," Photon. Technol. Lett., vol. 7, no. 5, pp. 508-510, 1995.
2. K. V. Shenoy, C. G. Fonstad, Jr., and J. M. Mikkelson, "High-temperature stability of refractory-metal VLSI GaAs MESFET's," IEEE Electronic Device Lett., vol. 15, pp. 106-108, 1994.
3. E. Kolowa, F. So, J. Tandon, and M. Nicolet, "Reactively sputtered W-N films as diffusion barriers in GaAs metallizations," J. Electrochem. Soc., pp. 1759-1763, 1987.
4. M. Mori, "Resistance increase in small-area Si-doped Al-N-Si contacts," IEEE Trans. Electron Devices, vol. ED-30 no. 2, pp. 81-16, 1983.