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Volumn 97, Issue 6, 1996, Pages 531-534

An ellipsometric study of the effects of DC bias of the plasma oxidation of silicon

Author keywords

A. semiconductors; A. thin films; D. optical properties

Indexed keywords

ACCELERATION; ANNEALING; ELECTRONS; ELLIPSOMETRY; IONS; OPTICAL PROPERTIES; OXIDATION; PLASMA APPLICATIONS; THIN FILMS;

EID: 0030082175     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(95)00618-4     Document Type: Article
Times cited : (2)

References (24)
  • 8
    • 0040489774 scopus 로고
    • March 12-13, 1992, Tsukuba, Japan, Mitsubishi Research Institute, Tokyo
    • H. Kuroki, H. Shinno, K.G. Nakamura, M. Kitajima & T. Kawabe, J. Appl. Phys. 71, 5278 (1992); Proc. Mater. Chemistry '92, March 12-13, 1992, Tsukuba, Japan, p. 407. Mitsubishi Research Institute, Tokyo (1992).
    • (1992) Proc. Mater. Chemistry '92 , pp. 407
  • 17
    • 85029990748 scopus 로고
    • PhD Thesis, Chapter 3. Gakushuin University
    • A. Itakura, PhD Thesis, Chapter 3. Gakushuin University (1990); A. Itakura & I. Arakawa, J. Vac. Sci. Technol. A9, 1779 (1991).
    • (1990)
    • Itakura, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.