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Volumn 97, Issue 6, 1996, Pages 531-534
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An ellipsometric study of the effects of DC bias of the plasma oxidation of silicon
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Author keywords
A. semiconductors; A. thin films; D. optical properties
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Indexed keywords
ACCELERATION;
ANNEALING;
ELECTRONS;
ELLIPSOMETRY;
IONS;
OPTICAL PROPERTIES;
OXIDATION;
PLASMA APPLICATIONS;
THIN FILMS;
CONVENTIONAL ANODIC OXIDATION;
PLASMA OXIDATION;
REAL TIME ELLIPSOMETRY;
REFLECTION COEFFICIENT;
SAMPLE BIAS DEPENDENCE;
ULTRA HIGH VACUUM CHAMBER;
SEMICONDUCTING SILICON;
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EID: 0030082175
PISSN: 00381098
EISSN: None
Source Type: Journal
DOI: 10.1016/0038-1098(95)00618-4 Document Type: Article |
Times cited : (2)
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References (24)
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