Fabrication and characterisation of transparent-gate field effect transistors using indium tin oxide

IEE Proceedings: Optoelectronics

Volumn 143, Issue 1, 1996, Pages 7-11

  Khalid, A H ^a   Rezazadeh, A A ^a  

^a KING'S COLLEGE LONDON   (United Kingdom)

Author keywords

Gallium arsenide transistor; ITO gate fingers; Optical control of microwave devices; Transparent gate MESFET

Indexed keywords

ELECTRIC CONDUCTIVITY MEASUREMENT; GATES (TRANSISTOR); OPTICAL COMMUNICATION; OPTOELECTRONIC DEVICES; PERFORMANCE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SPUTTER DEPOSITION; TRANSPARENCY;

GALLIUM ARSENIDE TRANSISTORS; GATE FINGERS; INDIUM TIN OXIDE; OPTICAL CONTROL; OPTICAL RESPONSIVITY; TRANSPARENT ELECTRODES; TRANSPARENT GATE FIELD EFFECT TRANSISTORS;

MESFET DEVICES;

EID: 0030081871     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:19960083     Document Type: Article

References (12)

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