A continuous and general model for boron diffusion during post-implant annealing including damaged and amorphizing conditions

IEEE Transactions on Semiconductor Manufacturing

Volumn 9, Issue 1, 1996, Pages 59-66

  Baccus, Bruno ^a,b   Vandenbossche, Eric ^c  

^a IEEE

^b Institut Superieur de l'Electronique et du Numerique   (France)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; CRYSTAL DEFECTS; ION IMPLANTATION; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS;

BORON DIFFUSION; POST IMPLANT ANNEALING; TRANSIENT ENHANCED DIFFUSION;

DIFFUSION IN SOLIDS;

EID: 0030081654     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.484283     Document Type: Article

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