Self-developing characteristics of Si containing polymers and their application to x-ray lithography

Journal of the Electrochemical Society

Volumn 143, Issue 2, 1996, Pages 657-665

  Yamaguchi, Afsuko ^a   Ogawa, Taro ^a   Tachibana, Hiroaki ^b   Oizumi, Hiroaki ^c   Soga, Takashi ^a   Matsumoto, Mutsuyoshi ^b   Matsuzaka, Takashi ^a   Takeda, Eiji ^a  

^a HITACHI LTD   (Japan)

^b NATL INST OF MAT AND CHEM RES   (Japan)

^c SORTEC Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DESORPTION; DURABILITY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; POLYSILANES; POLYSTYRENES; REACTIVE ION ETCHING; SOLVENTS; ULTRAVIOLET SPECTROSCOPY; X RAY LITHOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY;

OXYGEN REACTIVE ION ETCHING RESISTANCE; POSITIVE TONE DRY PROCESS; SELF DEVELOPING CHARACTERISTICS; SUBSTITUENTS; SURFACE IMAGING PROCESS; THERMAL DESORPTION;

SILICON COMPOUNDS;

EID: 0030081551     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836496     Document Type: Article

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