Open-circuit voltage characteristics of InP-based quantum well solar cells

Journal of Applied Physics

Volumn 79, Issue 4, 1996, Pages 1973-1978

  Anderson, Neal G ^a   Wojtczuk, Steven J ^b  

^a UNIVERSITY OF MASSACHUSETTS   (United States)

^b SPIRE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CURRENT DENSITY; ENERGY GAP; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; SHORT CIRCUIT CURRENTS; VOLTAGE MEASUREMENT;

CONVERSION EFFICIENCY; FILL FACTORS; INDIUM GALLIUM ARSENIDE; OPEN CIRCUIT VOLTAGE; RADIATIVE RECOMBINATION; SPECTRAL RESPONSE;

SOLAR CELLS;

EID: 0030081452     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361048     Document Type: Article

References (15)

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13. This estimate, which is obtained from the AMO spectrum and the baseline-cell and quantum-well band gaps, assumes total photon absorption above the lowest band gap in the structure and total carrier collection. It is an underestimate only if the quantum efficiency at photon energies above the InP gap is smaller than it is for photon energies below the InP gap but above the quantum-well gap. See Ref. 10 for a discussion.
14. R given in Ref. 10 includes additional factors which account for differences in the radiative coefficients and volume densities of states between the barrier material and quantum wells. Cell properties were found to be relatively insensitive to these differences, so these factors are neglected in this work.
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