Characterization of highly oriented (110) TiN films grown on epitaxial Ge/Si(001) heterostructures

Journal of Materials Research

Volumn 11, Issue 2, 1996, Pages 399-411

  Zheleva, T ^a   Oktyabrsky, S ^a   Jagannadham, K ^a   Vispute, R D ^a   Narayan, J ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHARACTERIZATION; DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; HETEROJUNCTIONS; RAMAN SPECTROSCOPY; SEMICONDUCTING GERMANIUM; STOICHIOMETRY; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CRYSTALLINITY; DOMAIN MATCHING; FOUR POINT PROBE; GERMANIUM FILMS; LATTICE MATCHING EPITAXY; PULSED LASER DEPOSITION; TITANIUM NITRIDE FILMS;

SEMICONDUCTING FILMS;

EID: 0030081370     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1996.0049     Document Type: Article

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