Multiple wavelength vertical-cavity laser array employing molecular beam epitaxy regrowth

Electronics Letters

Volumn 32, Issue 4, 1996, Pages 340-342

  Wipiejewski, T ^a,b   Ko, J ^a   Thibeault, B J ^a   Coldren, L A ^a  

^a University of California   (United States)

^b UNIVERSITY OF ULM   (Germany)

Author keywords

Semicounductor junction lasers; Verical cavity surface emitting lasers

Indexed keywords

ARRAYS; ELECTRIC CURRENTS; FREQUENCY DIVISION MULTIPLEXING; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR JUNCTIONS; WSI CIRCUITS;

MULTIPLE WAVELENGTH; REPRODUCIBILITY; SINGLEMODE EMISSION; SUBMILLIAMP THRESHOLD CURRENTS; TWO DIMENSIONAL; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0030081209     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960198     Document Type: Article

References (6)

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3. WIPIEJEWSKI, T., PETERS, M.G., HEGBLOM, E.R., and COLDREN, L.A.: 'Vertical-cavity surface-emitting laser diodes with post-growth wavelength adjustment', IEEE Photonics Technol. Lett., 1995, 7, pp. 727-729
4. HASEGAWA, H., FORWARD, K.E., and HARTNAGEL, H.: 'Improved method of anodic oxidation of GaAs', Electron. Lett., 1975, 11, pp. 53-54
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6. WIPIEJEWSKI, T., YOUNG, D.B., PETERS, M.G., THIBEAULT, B.J., and COLDREN, L.A.: 'Improved performance of vertical-cavity surface-emitting laser diodes with Au-plated heat spreading layer', Electron. Lett., 1995, 31, pp. 279-281