Effect of a low chromium impurity on properties of photoinduced charge carriers in Bi12TiO20 and Bi12SiO20 single crystals

Optics Communications

Volumn 123, Issue 4-6, 1996, Pages 592-596

  Mokrushina, E V ^b   Nechitailov, A A ^b   Prokofiev, V V ^a,b  

^a UNIVERSITY OF EASTERN FINLAND   (Finland)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; BISMUTH COMPOUNDS; CHARGE CARRIERS; CRYSTAL GROWTH FROM MELT; DOPING (ADDITIVES); HOLOGRAPHY; IMPURITIES; LIGHT REFRACTION; PHOTOCONDUCTIVITY; SINGLE CRYSTALS;

BISMUTH SILICON OXIDE; BISMUTH TITANIUM OXIDE; PHOTOEXCITED CARRIERS; PHOTOINDUCED CHARGE CARRIERS; SILLENITE CRYSTALS;

CHROMIUM;

EID: 0030080859     PISSN: 00304018     EISSN: None     Source Type: Journal    
DOI: 10.1016/0030-4018(95)00577-3     Document Type: Article

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