Doping effects on intersubband and interband optical transitions in GaSb-InAs superlattices

IEEE Journal of Quantum Electronics

Volumn 32, Issue 2, 1996, Pages 277-282

  Chen, S M ^b,c   Su, Y K ^a,b   Lu, Y T ^b  

^a IEEE

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPOSITION EFFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

DOPING CONCENTRATIONS; INTERBAND OPTICAL TRANSITIONS; INTERSUBBAND OPTICAL TRANSITIONS;

SEMICONDUCTOR SUPERLATTICES;

EID: 0030080781     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.481874     Document Type: Article

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