|
Volumn 153, Issue 2, 1996, Pages 395-399
|
Study on F+ ion implantation in SIMOX materials
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ANNEALING;
CHEMICAL BONDS;
FLUORINE;
OXIDES;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTOR DOPING;
SEPARATION;
THERMAL EFFECTS;
X RAY PHOTOELECTRON SPECTROSCOPY;
ACCEPTOR DOPANT CONCENTRATION;
BURIED OXIDE LAYER;
SEPARATION BY IMPLANTED OXYGEN (SIMOX);
ION IMPLANTATION;
|
EID: 0030080617
PISSN: 00318965
EISSN: None
Source Type: Journal
DOI: 10.1002/pssa.2211530213 Document Type: Article |
Times cited : (1)
|
References (7)
|