Elimination of Al line and via resistance degradation under HTS test in application of F-doped oxide as intermetal dielectric

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1588-1592

  Hwang, Byung Keun ^a   Choi, Ji Hyun ^a   Lee, Soowong ^a   Fujihara, Kazuyuki ^a   Chung, U In ^a   Lee, Sang In ^a   Lee, Moon Yong ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

CVD; Fluorine doped silicon oxide; HTS; Intermetal dielectric layer; Passivation; Ti underlayer; Via resistance degradation; Wedgelike defects

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; DEGRADATION; DESORPTION; FLUORINE; HIGH TEMPERATURE TESTING; OXIDES; PASSIVATION; PLASMA APPLICATIONS; REFRACTIVE INDEX; SPECTROSCOPY; STRESSES;

FLUORINE DOPED SILICON OXIDE; HIGH TEMPERATURE STORAGE TESTING; INTERMETAL DIELECTRIC; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RESISTANCE DEGRADATION; TITANIUM UNDERLAYER; WEDGELIKE DEFECTS;

DIELECTRIC FILMS;

EID: 0030080302     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1588     Document Type: Article

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