New structure of 1.3 μm strained-layer multi-quantum well complex-coupled distributed feedback lasers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1375-1377

  Kito, Masahiro ^a   Nakamura, Shinji ^a   Otsuka, Nobuyuki ^a   Ishino, Masato ^a   Matsui, Yasushi ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

Complex coupled distributed feedback lasers; InAsP absorptive grating; Laser diode; Metalorganic vapor phase epitaxy; Optical communication; Strained layer multi quantum well

Indexed keywords

ANNEALING; CLADDING (COATING); DIFFRACTION GRATINGS; ELECTRIC CURRENTS; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL COMMUNICATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

COMPLEX COUPLED DISTRIBUTED FEEDBACK LASERS; CONVENTIONAL HOLOGRAPHIC TECHNIQUE; GAIN COUPLING; PHOSPHINE; SIDE MODE SUPPRESSION RATIO; STRAINED LAYER MULTI QUANTUM WELL; THRESHOLD CURRENT;

DISTRIBUTED FEEDBACK LASERS;

EID: 0030079778     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1375     Document Type: Article

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