Characterization of In0.46Ga0.54P/n+-GaAs heterostructures by photoellipsometry

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1264-1266

  Saitoh, Tadashi ^a   Watanabe, Kenichi ^a   Hyuga, Fumiaki ^b   Xiong, Yi Ming ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

Built in electric field; Field induced change in the pseudodielectric function; Kranz Keldysh theory; Photoellipsometry; Pseudodielectric function; Surface Fermi level

Indexed keywords

BAND STRUCTURE; CHARACTERIZATION; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC FIELDS; ELLIPSOMETRY; ENERGY GAP; FERMI LEVEL; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SPECTRUM ANALYSIS;

BUILT IN ELECTRIC FIELD; KRANZ-KELDYSH THEORY; MID-BAND GAP ENERGY; PHOTOELLIPSOMETRY; PSEUDODIELECTRIC FUNCTION; SURFACE FERMI LEVEL;

HETEROJUNCTIONS;

EID: 0030079522     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1264     Document Type: Article

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