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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1060-1063

Anomalously enhanced boron diffusion in the base of SiGe HBTs induced by phosphorus implants into polysilicon emitters

Author keywords

Boron; Enhanced diffusion; Excess interstitial; Heterojunction bipolar transistor; Implant induced point defect; In situ phosphorus doped polysilicon; Polysilicon emitter; SiGe

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DIFFUSION; EPITAXIAL GROWTH; PHOSPHORUS; POINT DEFECTS; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; SUBSTRATES; X RAY DIFFRACTION;

ENHANCED BORON DIFFUSION; IMPLANT INDUCED POINT DEFECTS; PHOSPHORUS IMPLANTS; POLYSILICON EMITTERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030079520 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.1060 Document Type: Article

Times cited : (3)

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