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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1292-1298

Carrier dynamics in piezoelectric quantum wells grown on GaAs (111)A, (211)A and (311)A studied by time-resolved photoluminescence spectroscopy

(4) Vaccaro, Pablo O a Hosoda, Makoto a Fujita, Kazuhisa a Watanabe, Toshihide a

a ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL (Japan)

Author keywords

(111)A; (211)A; (311)A; Carrier dynamics; GaAs; InGaAs; Photoluminescence; Piezoelectric effect; Strained quantum well

Indexed keywords

CARRIER CONCENTRATION; ELECTRONS; ETCHING; LASER MODE LOCKING; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PIEZOELECTRICITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SPECTROSCOPY; SUBSTRATES;

CARRIER DYNAMICS; LIGHT PULSES; PHOTOCARRIER DISTRIBUTION; QUANTUM CONFINED STARK EFFECT; STRAINED QUANTUM WELL; TIME RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030078894 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.1292 Document Type: Article

Times cited : (9)

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