Ion beam sensitized SiO2 surface for halide ions

Analytica Chimica Acta

Volumn 320, Issue 2-3, 1996, Pages 289-291

  Pham, M T ^a   Matz, W ^a   Moller D ^a   Huller J ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Halide ions; Silicon dioxde surface; Surface technique

Indexed keywords

HALIDE; SILICON DIOXIDE;

ARTICLE; FILM; ION SELECTIVE ELECTRODE; NONHUMAN; PRIORITY JOURNAL; SURFACE PROPERTY; TECHNIQUE; X RAY DIFFRACTION;

EID: 0030024193     PISSN: 00032670     EISSN: None     Source Type: Journal    
DOI: 10.1016/0003-2670(95)00537-4     Document Type: Article

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