Calibration of semiconductor detectors for dose assessment in total body irradiation

Radiotherapy and Oncology

Volumn 38, Issue 3, 1996, Pages 247-251

  Jornet, N ^a   Ribas, M ^a   Eudaldo, T ^a  

^a HOSPITAL DE LA SANTA CREU I SANT PAU   (Spain)

Author keywords

Diode; In vivo measurements; Total body irradiation

Indexed keywords

ARTICLE; BONE MARROW TRANSPLANTATION; CALIBRATION; CONTROLLED STUDY; DOSIMETRY; PRIORITY JOURNAL; RADIATION DETECTOR; RADIATION SHIELD; WHOLE BODY RADIATION;

EID: 0029874870     PISSN: 01678140     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-8140(95)01677-5     Document Type: Article

References (9)

1. Heukelom, S., Lanson, J.H. and Minjnheer, B.J. Comparison of entrance and exit dose measurements using ionization chambers and silicon diodes. Phys. Med. Biol. 36: 47-49, 1991.
2. Leuens, G., van Dam, J., Dutreix, A. and van der Shueren, E. Quality assurance in radiotherapy by in vivo dosimetry. 1. Entrance dose measurements, a reliable procedure. Radiother. Oncol. 17: 141-151, 1990.
3. Leuens, G., van Dam, J., Dutreix, A. and van der Shueren, E. Quality assurance in radiotherapy by in vivo dosimetry. 2. Determination of the target absorbed dose. Radiother. Oncol. 19: 73-87, 1990.
4. Nilsson, B., Rudén, B.I. and Sorcini, B. Characteristics on silicon diodes as patients dosemeters in external radiation therapy. Radiother. Oncol. 11: 279-288, 1988.
5. Miralbell, R., Rouzaud, M., Grob, E., Nouet, P., Bieri, S., Majno, S., Botteron, P., Montero, M. and Precoma, J.C. Can an optimized total body irradiation technique be fast and reproducible?. Int. J. Radiat. Oncol. Biol. Phys. 29: 1167-1173, 1994.
6. Rikner, G. and Grusell, E. Patient dose measurements in photon fields by means of silicon semiconductor detectors. Med. Phys. 14: 870-873, 1987.
7. Rikner, E. and Grussell, E. Evaluation of temperature effects in p-type silicon detectors. Phys. Med. Biol. 31: 527-534, 1986.
8. Sociedad Espanola de Física Médica (S.E.F.M.). Procedimientos recomendados para la dosimetria de fotones y electrones de energias comprendidas entre 1 MeV y 50 MeV en radioterapia de haces externos. S.E.F.M., Madrid, 1984.
9. van Dam, J., Leuens, G. and Dutreix, A. Correlation between temperature and dose rate dependence of semiconductor response; influence of accumulated dose. Radiother. Oncol. 19: 345-351, 1990.