Resonant spin-flip Raman scattering and localized exciton luminescence in submonolayer InAs-GaAs structures

Solid State Communications

Volumn 97, Issue 3, 1996, Pages 169-174

  Sirenko, A A ^a,b   Ruf, T ^a   Ledentsov, N N ^b   Egorov, A Yu ^b   Kop'ev, P S ^b   Ustinov, V M ^b   Zhukov, A E ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

A. nanostructures; A. semiconductors; E. inelastic light scattering; E. luminescence

Indexed keywords

ELECTRONS; EXCITONS; LIGHT SCATTERING; MONOLAYERS; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPY;

INELASTIC LIGHT SCATTERING; MAGNETIC SPLITTING; MAGNETO-LUMINESCENCE SPECTROSCOPY; RESONANT EXCITATION; SPIN FLIP RAMAN SCATTERING;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0029779122     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(95)00624-9     Document Type: Article

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