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Volumn 97, Issue 2, 1996, Pages 119-123

Effects of a time-dependent transverse electric field on the quantum transport in narrow channels

Author keywords

A. nanostructures; A. semiconductors; D. electronic transport; D. radiation effects

Indexed keywords

BAND STRUCTURE; ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; ELECTRON ABSORPTION; ELECTRON EMISSION; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC DENSITY OF STATES; NANOSTRUCTURED MATERIALS; POLARIZATION; QUANTUM ELECTRONICS; RADIATION EFFECTS;

EID: 0029778466     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(95)00597-8     Document Type: Article
Times cited : (10)

References (19)
  • 18
    • 85029979344 scopus 로고    scopus 로고
    • note
    • i ≃ 0, can be very large. Thus, in the presence of elastic scattering (such as induced by impurities) or inelastic scattering (such as induced by oscillating-barriers, or even photons) events which allow the electrons to make transitions to the vicinity of, and just below, a subband bottom, the transition can be much enhanced by the large DOS, provided that there is a small and negative imaginary part to the energy. Given the evanescent nature of the state and the small and negative imaginary part in the energy, it is not unexpected that the state can become a QBS.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.