Suppression of hole injection from Ce4+ and Fe(CN)3-6 AT p-type semiconductors by illumination

Electrochimica Acta

Volumn 41, Issue 1, 1996, Pages 109-115

  Meulenkamp, E A ^a,b   De Wit, A R ^a,b  

^a UTRECHT UNIVERSITY   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Hole injection; III V semiconductor; IMPS; Photoelectrochemistry; Surfaces states

Indexed keywords

CERIUM; CHARGE TRANSFER; ELECTROCHEMICAL ELECTRODES; ELECTRONS; IRON COMPOUNDS; LIGHTING; POLARIZATION; QUANTUM EFFICIENCY; REACTION KINETICS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SPECTROSCOPY;

DIFFUSION FLUX; HOLE INJECTION; HOLE INJECTION SUPPRESSION; INTENSITY MODULATED PHOTOCURRENT SPECTROSCOPY; PHOTOELECTROCHEMISTRY; PHOTOELECTRONS; PHOTON FLUX; SURFACE STATES;

REDUCTION;

EID: 0029777971     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/0013-4686(95)00275-J     Document Type: Article

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