Extreme UV lithography: A new laser plasma target concept and fabrication of multilayer reflection masks

Microelectronic Engineering

Volumn 30, Issue 1-4, 1996, Pages 183-186

  Bijkerk, F ^a   Shmaenok, L A ^a   Louis, E ^a   Voorma, H J ^a   Koster, N B ^a   Bruineman, C ^a   Bastiaensen, R K F J ^a   Van Der Drift, E W J M ^b   Romijn, J ^b   De Groot, L E M ^b   Rousseeuw, B A C ^b   Zijlstra, T ^b   Platonov, Yu Ya ^c   Salashchenko, N N ^c  

^a FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

EUVL; Fast rotating target; Laser plasma source; Mo si coatings; Plasma debris; Reflection mask fabrication

Indexed keywords

COATINGS; ETCHING; LASER PRODUCED PLASMAS; MASKS; MICROELECTRONIC PROCESSING; MOLYBDENUM; PLASMA SOURCES; SEMICONDUCTING SILICON;

EXTREME ULTRA VIOLET LITHOGRAPHY; FAST ROTATING TARGET; LASER PLASMA SOURCE; PLASMA DEBRIS; REFLECTION MASK FABRICATION;

X RAY LITHOGRAPHY;

EID: 0029777790     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00222-7     Document Type: Article

References (12)

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10. L.A. Shmaenok, patent application (1995)
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12. N.N. Salashchenko, Yu.Ya. Platonov, S.Yu. Zuev, Nucl. Instr. Meth. A, vol. 359, 114-120 (1995)