Rapid thermal annealing of tungsten silicide films

Materials Research Society Symposium - Proceedings

Volumn 402, Issue , 1996, Pages 625-630

  Fabricius, A ^a   Nennewitz, O ^a   Spiess, L ^a   Cimalla, V ^a   Pezoldt, J ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CALCULATIONS; CRYSTAL STRUCTURE; ELECTRIC RESISTANCE MEASUREMENT; GRAIN SIZE AND SHAPE; LAGRANGE MULTIPLIERS; MAGNETRON SPUTTERING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; STOICHIOMETRY; THERMAL EFFECTS; X RAY DIFFRACTION;

CRYSTALLINE VOLUME; FILM THICKNESS RATIO; LINEAR FOUR POINT METHOD; RELATIVE LATTICE STRAIN; SILICON OXIDE; STOICHIOMETRIC DEPTH PROFILE; TUNGSTEN SILICIDE FILMS;

SEMICONDUCTING FILMS;

EID: 0029777240     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)