Ultra sharp crystalline silicon tip array used as field emitter

Microelectronic Engineering

Volumn 30, Issue 1-4, 1996, Pages 395-398

  Mehr, W ^a   Wolff, A ^a   Frankenfeld, H ^a   Skaloud, T ^a   Hoppner W ^a   Bugiel, E ^a   Larz J ^a   Hunger, B ^a  

^a Institute of Semiconductor Physics   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; CRYSTALLINE MATERIALS; ELECTRIC CURRENTS; MICROELECTRONIC PROCESSING; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR DOPING; SILICON WAFERS; SINGLE CRYSTALS; VACUUM APPLICATIONS;

ANODE CURRENT; EXTRACTION GRID; FIELD EMITTER; SILICON TIP ARRAYS;

GATES (TRANSISTOR);

EID: 0029776926     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00271-5     Document Type: Article

References (4)

1. H. Busta, J.Micromechan. Microeng. 2, 43 , (1992)
2. J.P. Spallas, J.H. Das and N.C. MacDonald, J. Vac. Sci. Technol. B, Vol. 11, No. 2, 437 ,( 1993 )
3. J. Liu, J.J. Hren, C.T. Sune, G. W. Jones and H.F. Gray, IEDM Tech. Dig., 374 ( 1992 )
4. C.A. Spindt, C.E. Holland, A. Rosengreen and Brodie, IEEE Trans. on Electron Devices, 38, No. 10, 2355 (1991)