Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures

Applied Physics Letters

Volumn 68, Issue 1, 1996, Pages 78-80

  Shen, W Z ^a,b,c   Shen, S C ^a,b,c   Chang, Y ^a,b,c   Tang, W G ^a,b,c   Lu, Y ^d   Li, A Z ^d  

^a CCAST WORLD LABORATORY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^c Center of Advanced Science and Technology of Microstructures   (China)

^d SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CHARGE CARRIERS; ELECTRON TUNNELING; EXCITONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LASER BEAM EFFECTS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

ALUMINUM ARSENIDE; INDIUM ARSENIDE; INDIUM GALLIUM ARSENIDE; LASER BEAM EXCITATIONS; RADIATIVE RECOMBINATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029776515     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116763     Document Type: Article

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