Low-noise distributed amplifier with active load

IEEE Microwave and Guided Wave Letters

Volumn 6, Issue 1, 1996, Pages 7-9

  Ikalainen, Pertti K ^a,b  

^a TEXAS INSTRUMENTS   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE; COMPUTER SIMULATION; ELECTRIC IMPEDANCE; FREQUENCIES; HIGH ELECTRON MOBILITY TRANSISTORS; RESISTORS; SEMICONDUCTOR DEVICE MODELS; SHORT CIRCUIT CURRENTS; SPURIOUS SIGNAL NOISE; TEMPERATURE; TRANSCONDUCTANCE;

ACTIVE GATE LINE; ELECTRONICALLY COLD RESISTOR; LOW NOISE DISTRIBUTED AMPLIFIER; PHYSICAL AMBIENT TEMPERATURE; POSPIESZALSKI NOISE MODEL;

MICROWAVE AMPLIFIERS;

EID: 0029776507     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.482054     Document Type: Article

References (9)

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