Photoluminescence of excitons bound to the radiation damage defects B41 (1.1509 eV) in silicon

Solid State Communications

Volumn 97, Issue 2, 1996, Pages 137-142

  Kaminskii, A S ^a   Lavrov, E V ^a   Karasyuk, V A ^b   Thewalt, M L W ^b  

^a INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

^b SIMON FRASER UNIVERSITY   (Canada)

Author keywords

A. semiconductors; C. point defects; D. electronic states (localized); E. luminescence; Radiation effects

Indexed keywords

CRYSTAL SYMMETRY; EXCITONS; LUMINESCENCE OF SOLIDS; MAGNETIC FIELD EFFECTS; NEUTRON IRRADIATION; PHOSPHORUS; PHOTOLUMINESCENCE; POINT DEFECTS; RADIATION DAMAGE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

ISOELECTRONIC CENTERS;

SEMICONDUCTING SILICON;

EID: 0029776152     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(95)00614-1     Document Type: Article

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