Reduction of CD variance by using optical proximity correction for patterning with DUV phase shift mask

Microelectronic Engineering

Volumn 30, Issue 1-4, 1996, Pages 119-122

  Zhang, H ^a,b  

^a SEMATECH   (United States)

^b NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; MASKS; MEASUREMENT ERRORS; NUMERICAL METHODS; PHASE SHIFT; PHOTORESISTS; ULTRAVIOLET RADIATION;

CRITICAL DIMENSIONAL VARIANCE; OPTICAL PROXIMITY CORRECTION; PATTERNING; PHASE SHIFT MASK;

PHOTOLITHOGRAPHY;

EID: 0029775493     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00208-1     Document Type: Article

References (2)

1. O.W. Otto, J.G. Garofalo, K.K. Low, C.M. Yuan, R.C. Henderson, C. Pierrat, R.L. Kostelak, S. Vaidya, P.K. Vasudev, "Automated optical proximity correction: a rules-based approach", Optical/Laser Microlithography VII, SPIE 2197 (1994), pp. 278-293.
2. J.P. Stirniman, M.L. Rieger, "Fast proximity correction with zone sampling", Optical/Laser Microlithography VII, SPIE 2197 (1994), pp. 294-301.