Dual-wavelength AlGaAs/GaAs laser by selective removal of a quantum well in an asymmetric dual quantum well structure

Applied Physics Letters

Volumn 68, Issue 3, 1996, Pages 284-286

  Beernink, K J ^a   Sun, D ^a   Thornton, R L ^a   Treat, D W ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON NITRIDE; SURFACES;

ALUMINUM GALLIUM ARSENIDE; ASYMMETRIC DUAL QUANTUM WELL; IMPURITY INDUCED LAYER DISORDERING; SELECTIVE INTERMIXING; SURFACE PATTERNING;

QUANTUM WELL LASERS;

EID: 0029774711     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116060     Document Type: Article

References (6)

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