Electrical and field emission properties of nanocrystalline materials fabricated by electron-beam induced deposition

Microelectronic Engineering

Volumn 30, Issue 1-4, 1996, Pages 471-474

  Schoßler C ^b   Kaya, A ^b   Kretz, J ^b   Weber, M ^a   Koops, H W P ^a  

^a DEUTSCHE TELEKOM LABORATORIES   (Germany)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SINGLE CRYSTALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON BEAM INDUCED DEPOSITION; EXTRACTION VOLTAGES; FIELD EMISSION; FIELD EMITTER TIPS; VOLTAGE DROP MEASUREMENT;

NANOSTRUCTURED MATERIALS;

EID: 0029774323     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00290-1     Document Type: Article

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