SCOPUS 정보 검색 플랫폼

Solid-State Electronics

Volumn 39, Issue 1, 1996, Pages 7-13

Study of quasi-two dimensional hole gas in Si/SixGe1-x/Si quantum wells

(4) Cheon, S a Lee, S C a,b Hong, S a Yoo, K H a,c

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b Electronics and Telecommunications Research Institute (ETRI) (South Korea)

c Korea Research Institute of Standards and Science (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; CHARGE CARRIERS; ELECTRIC CHARGE; ELECTRIC PROPERTIES; MOLECULAR BEAM EPITAXY; NUMERICAL METHODS; SEMICONDUCTOR DEVICE MODELS; STRUCTURE (COMPOSITION);

BAND MIXING EFFECT; CHARGE DISTRIBUTION; EFFECTIVE MASS; HOLE MOBILITY; MULTIBAND EFFECTIVE MASS MODEL; QUASI-TWO DIMENSIONAL HOLE GAS; SCHRODINGER-POISSON EQUATIONS; SPLIT-OFF BAND;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029772463 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(95)00110-F Document Type: Article

Times cited : (4)

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