Extraction method of the base series resistances in bipolar transistor in presence of current crowding

IEEE Journal of Solid-State Circuits

Volumn 31, Issue 1, 1996, Pages 132-135

  Dubois, E ^a   Bricout, P H ^a   Robilliart, E ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; BIPOLAR INTEGRATED CIRCUITS; BOUNDARY CONDITIONS; CALCULATIONS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT DISTRIBUTION; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS;

BASE SHEET RESISTANCE; CURRENT GAIN; DEBIASING EFFECTS; DOUBLE BASE EXTRACTION TECHNIQUE; EXTRINSIC BASE RESISTANCE; TWO DIMENSIONAL NUMERICAL SIMULATION; VOLTAGE DISTRIBUTION;

BIPOLAR TRANSISTORS;

EID: 0029772406     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.485876     Document Type: Article

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