In situ analysis of the formation of thin TiSi2 (<50 nm) contacts in submicron CMOS structures during rapid thermal annealing

Materials Research Society Symposium - Proceedings

Volumn 402, Issue , 1996, Pages 257-268

  Clevenger, L A ^a   Cabral Jr , C ^a   Roy, R A ^a   Lavoie, C ^a   Viswanathan, R ^a   Saenger, K L ^a   Jordan Sweet, J ^a   Morales, G ^a   Ludwig Jr , K L ^a   Stephenson, G B ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; ELECTRIC CONTACTS; IN SITU PROCESSING; MOLYBDENUM; PHASE TRANSITIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; THIN FILMS; TITANIUM COMPOUNDS; X RAYS;

CMOS STRUCTURES; DOPANTS; LINEWIDTH EFFECTS; RAPID THERMAL ANNEALING; SYNCHROTRON X RAY SOURCE; TITANIUM DISILICIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0029772301     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)