Light-absorption effect on Bragg interference in multilayer semiconductor heterostructures

Journal of Applied Physics

Volumn 79, Issue 2, 1996, Pages 595-598

  Kavokin, Alexey V ^a   Kaliteevski, Mikhail A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; EFFECTS; EXCITONS; HETEROJUNCTIONS; LIGHT ABSORPTION; LIGHT INTERFERENCE; LIGHT REFLECTION; MATRIX ALGEBRA; RESONANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ALUMINUM ARSENIDE; AMPLITUDE REFLECTION; BRAGG REFLECTORS; REFLECTIVITY; TRANSFER MATRIX METHOD; TRANSMISSION COEFFICIENTS;

MIRRORS;

EID: 0029772260     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360801     Document Type: Article

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