Improved spin-on glass process with multilevel metallization

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

Volumn 79, Issue 1, 1996, Pages 75-82

  Ohashi, Naofumi ^a,b,c   Nezu, Hiroki ^a,c,d   Owada, Nobuo ^a,c,e,f   Hirasawa, Shigeki ^a,g,h,i  

^a HITACHI LTD   (Japan)

^b KANSAI UNIVERSITY   (Japan)

^c Process Development Section

^d HOKKAIDO UNIVERSITY   (Japan)

^e UNIVERSITY OF TOKYO   (Japan)

^f MIT

^g TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^h Mech Eng Research Laboratory   (Japan)

ⁱ Japan Heat Transfer Association

Author keywords

Fluid; Insulating coating; Insulating material; Semiconductor devices; Spin on glass

Indexed keywords

COATINGS; ELECTRIC WIRE; ELECTRIC WIRING; INSULATING MATERIALS; INTEGRATED CIRCUIT TESTING; LOGIC CIRCUITS; LSI CIRCUITS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR PLASMAS; SILICA;

ETCH BACK PROCESS; INSULATING COATING; MULTILEVEL METALLIZATION; SPIN ON GLASS PROCESS;

SEMICONDUCTING GLASS;

EID: 0029772253     PISSN: 8756663X     EISSN: None     Source Type: Journal    
DOI: 10.1002/ecjb.4420790108     Document Type: Article

References (2)

1. T. Fujiwara et al. Planarization technology combining new organic SOG and etch-back process in multichamber system. Proceedings of 1992 V-MIC 201 (1992).
2. L. E. Stillwagon et al. Fundamentals of topographic substrate leveling. Appl. Phys., 63, 11, p. 1 (June 1988).