Low temperature MOCVD growth of V/VI materials via a Me3SiNMe2 elimination reaction

International Conference on Thermoelectrics, ICT, Proceedings

Volumn , Issue , 1996, Pages 430-434

  Groshens, T J ^a   Gedridge Jr , R W ^a   Scheri, R ^a   Cole, Teresa ^a  

^a NAVAL AIR WARFARE CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY MEASUREMENT; FILM GROWTH; HALL EFFECT; MAGNETIC VARIABLES MEASUREMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; REACTION KINETICS; SEMICONDUCTING TELLURIUM COMPOUNDS; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

CHALCOGENIDE MATERIALS; DIMETHYLAMINOTRIMETHYLSILANE ELIMINATION REACTIONS; VAN DER PAUW TECHNIQUE;

SEMICONDUCTING FILMS;

EID: 0029771975     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)