A quantitative stugy of the piezooptical activity in GaAs

Solid State Communications

Volumn 97, Issue 4, 1996, Pages 261-266

  Koopmans, B ^a   Etchegoin, P ^a   Santos, P ^a   Cardona, M ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

A. semiconductors; B. optical properties; C. high pressure; C. strain

Indexed keywords

BAND STRUCTURE; BIREFRINGENCE; ELECTROOPTICAL EFFECTS; HIGH PRESSURE EFFECTS; LIGHT TRANSMISSION; OPTICAL PROPERTIES; PIEZOELECTRICITY; STRAIN; STRESS ANALYSIS;

GYROTROPIC EFFECTS; PHASE SENSITIVE TRANSMISSION; PIEZOOPTICAL ACTIVITY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0029771510     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(95)00572-2     Document Type: Article

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