Molecular beam epitaxy of single crystal colossal magneto-resistive material

Materials Research Society Symposium - Proceedings

Volumn 401, Issue , 1996, Pages 467-471

  Eckstein, J N ^a   Bozovic, I ^a   Rzchowski, M ^a   O'Donnell, J ^a   Hinaus, B ^a   Onellion, M ^a  

^a Varian Ginzton Research Center   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); LANTHANUM COMPOUNDS; LATTICE CONSTANTS; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; RELAXATION PROCESSES; SINGLE CRYSTALS; SURFACES;

ATOMIC LAYER BY LASER MOLECULAR BEAM EPITAXY; EXACT CATION STOICHIOMETRY; FIELD RESPONSE; GROWTH CONDITION DEPENDENCE; PSEUDOMORPHIC RELAXATION; SINGLE CRYSTAL COLOSSAL MAGNETORESISTIVE MATERIAL; STRAIN RELAXATION;

MAGNETIC FILMS;

EID: 0029771498     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)