Novel nanofabrication method of high temperature metallic Coulomb blockade devices

Microelectronic Engineering

Volumn 30, Issue 1-4, 1996, Pages 403-406

  Vieu, C ^a   Mejias, M ^a   Carcenac, F ^a   Faini, G ^a   Launois, H ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; ELECTRON BEAM LITHOGRAPHY; ELECTRON DEVICES; ELECTRONS; HIGH TEMPERATURE OPERATIONS; MORPHOLOGY; NANOSTRUCTURED MATERIALS; PHOTORESISTS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL JUNCTIONS; VAPORIZATION;

ALUMINUM METALLIC RINGS; COULOMB BLOCKADE; HIGH TEMPERATURE PHENOMENA; INORGANIC RESIST; NANOMETRIC METALLIC ISLANDS;

NANOTECHNOLOGY;

EID: 0029771238     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00273-1     Document Type: Article

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