Growth of ultra-thin AlN(0001) films on NiAl(111)

Solid State Communications

Volumn 97, Issue 1, 1996, Pages 1-5

  Gassmann P ^a   Boysen, J ^a   Schmitz, G ^a   Bartolucci, F ^a   Franchy, R ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

A. Thin films; B. Crystal growth; D. Optical properties; D. Phonons; E. Electron energy loss spectroscopy

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CRYSTAL GROWTH; DECOMPOSITION; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY GAP; FILM GROWTH; INTERFACES (MATERIALS); LOW ENERGY ELECTRON DIFFRACTION; NICKEL COMPOUNDS; OPTICAL PROPERTIES; PHONONS; SEMICONDUCTING ALUMINUM COMPOUNDS;

ALUMINUM NITRIDE; DIELECTRIC THEORY; FUCHS KLIEWER PHONON MODE; HEXAGONAL SYMMETRY; HIGH RESOLUTION ELECTRON ENERGY LOSS SPECTROSCOPY; INTERFACE GAP STATES;

ULTRATHIN FILMS;

EID: 0029770891     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(95)00600-1     Document Type: Article

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