Reduction of lateral dimension on InGaAs/GaAs multilayers on non-(111) V-grooved GaAs(100) substrate by chemical beam epitaxy

Materials Research Society Symposium - Proceedings

Volumn 405, Issue , 1996, Pages 49-54

  Kim, Sung Bock ^a   Ro, Jeong Rae ^a   Park, Seong Ju ^a   Lee, El Hang ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CHEMICAL BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES;

ADATOMS; ARSINE; MONOETHYLARSINE; OPTIMUM GROWTH TEMPERATURE; PHOTOLUMINESCENCE PEAK; TRIETHYLGALLIUM; TRIMETHYLINDIUM;

SEMICONDUCTOR SUPERLATTICES;

EID: 0029770797     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)