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Volumn , Issue , 1996, Pages 165-
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Comparison of proton implanted and selectively oxidized vertical-cavity surface-emitting lasers
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
ION IMPLANTATION;
OXIDATION;
PERFORMANCE;
PROTONS;
REFRACTIVE INDEX;
SEMICONDUCTOR DEVICE STRUCTURES;
THERMAL CONDUCTIVITY;
CURRENT CONFINEMENT;
OPTICAL GUIDING;
PROTON IMPLANTATION;
VERTICAL CAVITY SURFACE EMITTING LASER;
WALLPLUG EFFICIENCY;
SEMICONDUCTOR LASERS;
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EID: 0029770024
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/cleoe.1996.562258 Document Type: Conference Paper |
Times cited : (5)
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References (1)
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