Non-destructive testing of power MOSFET's failures during reverse recovery of drain-source diode

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 1, Issue , 1996, Pages 593-599

  Busatto, Giovanni ^a   Fioretto, Olindo ^a   Patti, Alfonso ^a  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; BRIDGE CIRCUITS; DIODES; ELECTRIC BREAKDOWN; ELECTRIC FAULT CURRENTS; ELECTRIC NETWORK TOPOLOGY; ELECTRIC WAVEFORMS; FAILURE ANALYSIS; NONDESTRUCTIVE EXAMINATION; POWER ELECTRONICS; WAVEFORM ANALYSIS;

BIPOLAR PARASITIC TRANSISTOR; DEVICE FAILURE; DRAIN SOURCE DIODES; REVERSE RECOVERY;

MOSFET DEVICES;

EID: 0029766334     PISSN: 02759306     EISSN: None     Source Type: None    
DOI: 10.1109/PESC.1996.548641     Document Type: Conference Paper

References (10)

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8. D. L. Blackburn Turn-off failure of power MOSFET's IEEE Trans. Power Electronics PE-2 2 136 142 1987
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10. D. L. Blackburn D. W. Berning An experimental study of reverse-bias second breakdown IEEE International Electron Device Meeting 297 301 IEEE International Electron Device Meeting 1980