Self-assembled monolayer resists and nanoscale lithography of silicon dioxide thin films by chemically enhanced vapor etching (CEVE)

Superlattices and Microstructures

Volumn 20, Issue 3, 1996, Pages 369-376

  Pan, M ^a   Yun, M ^a   Kozicki, M N ^a   Whidden, T K ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBOXYLIC ACIDS; ELECTRON BEAMS; ETCHING; HYDROCARBONS; LITHOGRAPHY; MASKS; MONOLAYERS; NANOTECHNOLOGY; PHOTORESISTS; SILICA; THERMODYNAMICS;

CHEMICALLY ENHANCED VAPOR ETCHING; NANOSCALE FEATURES; PATTERN GENERATION; PROXIMITY EFFECTS; RESIST TRANSPARENCY; STANDING WAVE EFFECTS; SURFACE MASKS;

THIN FILMS;

EID: 0029766292     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0091     Document Type: Article

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